unisonic technologies co., ltd 8n90 preliminary power mosfet www.unisonic.com.tw 1 of 5 copyright ? 2011 unisonic technologies co., ltd qw-r502-470.d 8 a , 900v n-channel power mosfet ? description the utc 8n90 is an n-channel mode power mosfet, using utc?s advanced technology to prov ide costumers planar stripe and dmos technology. this technology allows a minimum on-state resistance, superior switching performance. it also can withstand high energy pulse in the avalanche and commutation mode. the utc 8n90 is generally applied in high efficiency switch mode power supplies. ? features * r ds(on) =1.55 ? @ v gs =10v * fast switching speed * 100% avalanche tested * improved dv/dt capability ? symbol 1.gate 3.source 2.drain ? ordering information ordering number package pin assignment packing lead free halogen free 1 2 3 8n90l-ta3-t 8n90g-ta3-t to-220 g d s tube note: g: gnd, d: drain, s: source
8n90 preliminary power mosfet unisonic technologies co., ltd 2 of 5 www.unisonic.com.tw qw-r502-470.d ? absolute maximum ratings parameter symbol ratings unit drain to source voltage v dss 900 v gate to source voltage v gss 30 v continuous drain current (t c =25c) i d 8 a pulsed drain current (note 1) i dm 25 a avalanche current (note 1) i ar 6.3 a single pulsed avalanche energy (note 2) e as 850 mj repetitive avalanche energy (note 1) e ar 17.1 mj peak diode recovery dv/dt (note 3) dv/dt 4.0 v/ns power dissipation (t c =25c) p d 147 w linear derating factor above t c =25c 1.17 w/c junction temperature t j +150 c storage temperature t stg -55~+150 c note: 1. repetitive rating : pulse width limited by maximum junction temperature 2. l=27mh, i as =8a, v dd = 50v, r g =25 ? , starting t j =25c 3. i sd 8a, di/dt 200a/ s, v dd bv dss , starting t j =25c 4. absolute maximum ratings are those values be yond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. ? thermal data parameter symbol ratings unit junction to ambient ja 62.5 c/w junction to case jc 0.85 c/w
8n90 preliminary power mosfet unisonic technologies co., ltd 3 of 5 www.unisonic.com.tw qw-r502-470.d ? electrical characteristics (t c =25c, unless otherwise specified) parameter symbol test conditions min typ max unit off characteristics drain-source breakdown voltage bv dss v gs =0v, i d =250a 900 v breakdown voltage temperature coefficient bv dss / t j i d =250 a, referenced to 25c 0.95 v/c drain-source leakage current i dss v ds =900v, v gs =0v 10 a v ds =720v, t c =125c 100 a gate-source leakage current i gss v ds =0v ,v gs =30v 100 na on characteristics gate threshold voltage v gs ( th ) v ds =v gs , i d =250a 3.0 5.0 v drain-source on-state resistance r ds ( on ) v gs =10v, i d =4a 1300 1550 m ? forward transconductance (note 1) g fs v ds =50v, i d =4a 4 5.5 s dynamic parameters input capacitance c iss v ds =25v,v gs =0v,f=1.0mhz 1600 2080 pf output capacitance c oss 130 170 pf reverse transfer capacitance c rss 12 15 pf switching parameters (note 1, note 2) total gate charge q g v ds =720v, v gs =10v, i d =8a 35 45 nc gate-source charge q gs 10 nc gate-drain charge q gd 14 nc turn-on delay time t d ( on ) v dd =450v, i d =8a, r g =25 ? 40 90 ns turn-on rise time t r 110 230 ns turn-off delay time t d ( off ) 70 150 ns turn-off fall time t f 70 150 ns source- drain diode ratings and characteristics maximum body-diode continuous current i s 8 a maximum body-diode pulsed current i sm 25 a drain-source diode forward voltage v sd i s =8a, v gs =0v 1.4 v body diode reverse recovery time t r r v gs =0v, i s =8a, di f /dt=100a/ s (note 1) 530 ns body diode reverse recovery charge q rr 5.8 c note: 1. pulse test : pulse width 300 s, duty cycle 2% 2. essentially independent of operating temperature
8n90 preliminary power mosfet unisonic technologies co., ltd 4 of 5 www.unisonic.com.tw qw-r502-470.d ? test circuits and waveforms v ds + - dut r g dv/dt controlled by r g i sd controlled by pulse period v dd peak diode recovery dv/d t test circuit & waveforms same type as dut i sd v gs l v gs (driver) i sd (dut) v ds (dut) d= gate pulse width gate pulse period 10v di/dt body diode reverse current i rm body diode recovery dv/dt v dd v sd body diode forward voltage drop i fm , body diode forward current driver
8n90 preliminary power mosfet unisonic technologies co., ltd 5 of 5 www.unisonic.com.tw qw-r502-470.d ? test circuits and waveforms(cont.) 50k ? 300nf dut v ds 10v 12v charge q gs q gd q g gate charge test circuit gate charge waveforms v gs v gs 200nf same type as dut 3ma 10v t p r g dut l v ds i d v dd unclamped inductive switching test circuit t p v dd i as bv dss i d (t) v ds (t) time e as = 2 1 li as 2 bv dss bv dss -v dd unclamped inductive switching waveforms utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior writ ten consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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